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thickness-dependent transport channels in topological insulator bi 2 se 3 thin films grown by magnetron sputtering

by:Newland     2019-08-27
We study low.
The temperature transmission properties of the two-layer film prepared by sputtering.
Positive magnetic resistance caused by weak anti-localization (WAL)
The effect was observed at low temperatures.
The observed WAL effect is essentially two-dimensional.
Application Haikang City-Larkin-
In Nagaoka theory, we get the phase-back length.
It is found that the temperature dependence of the phase withdrawal length cannot be described only by the naiquest electron
The electronic phase retreat conflicts with the existing experimental results.
From the WAL effect, we extracted the number of transmission channels and found that the number of transmission channels increased as the film thickness increased, reflecting the thickness-
Dependency coupling between upper and lower surface states in topological insulator.
On the other hand, electronics-
Electronic interaction (EEI)
Effect observed at temperature
Depends on the conductivity.
From the EEI effect, we also extracted the number of transmission channels, which is similar to the thickness dependence obtained from the WAL effect analysis.
Therefore, the EEI effect can be used to analyze the coupling effect between the upper and lower surface states in the topological insulator, just like the WAL effect.
Effect of radio frequency plasma on SrTiO 3 (111)
Rf-substrate
RF sputtering.
Business BiSe target (99. 99% purity)
As a source of sputtering.
The basic pressure of the vacuum chamber is ≤ 9 × 10 Pa, and the sputtering deposition is carried out in the ar atmosphere (99. 999%)of 0. 3 Pa.
The substrate temperature is maintained at 425 °c during the sputtering process. Hall-bar-
A sample of the shape is defined using a mechanical mask.
For thickness-
According to the relevant study, the film with a change in thickness between 6 and NM is ~ The average growth rate of 3 nm/min was deposited.
The thickness of the film was measured with AFM.
The structure, composition and surface morphology of the film were characterized by X-ray diffraction, energy and scanning electron microscopy. The four-
Probe conductivity and Hall effect measurement using a physical property measurement system (PPMS-
Quantum design 6000).
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