selective-area growth of single-crystal wurtzite gan nanorods on sio x /si(001) substrates by reactive magnetron sputter epitaxy exhibiting single-mode lasing
Selective-area growth (SAG)of single- Crystal fiber of GaN nano-rods (NRs) Directly on Si (001) Substrate with UN Etching the natural SiOx amorphous layer, assisted by a patterned TiNx mask made by the exposure of the Nano sphere (NSL) , Has been sputtering by reactive magnetic control (MSE). GaN NRs grow vertically to the substrate surface in the c-direction Shaft in the well-defined nano-opening areas. A 5- The step structure and morphological evolution of the sunken NRs observed at different sputtering times depicts a comprehensive growth model, listed in sequence as: Formation in c- Axis-oriented core, roughening and agglomeration Islands, single NR evolution, and finally quasi- Balanced crystal formation. Room- The temperature cathode light emission spectrum shows a strong GaN bandedge emission with uniform light emission on the NRs, which indicates a high growth quality and high purity of the NRs. In addition, singlelongitudinal- Mode Laser, attributed to good Through the light pump, the surface NR geometry forming the Fabry-p é rot cavity is realized, which is high for manufacturing Performance Laser optoelectronic using MSE. The selective-area growth (SAG)of nanorods (NRs) By using patterned substrates, the advantages of synthetic NRs with uniform size resulting in uniform performance are demonstrated, but also on-site- Control growth specifically. For example, previous studies have shown that uneven size distribution of GaN NRs can lead to widening of light fluorescence (PL) Optical current generation efficiency in NR photo detectors signal or dependence on NR diameter. In addition, since the use of OSS controls the location of the NRs, this makes it possible to have an in-depth study of the dynamics and mobility of the adatom, thus defining a clear growth mechanism. Due to the strong influence of geometry and size on the physical properties of nano-materials Size Materials, need to have a detailed understanding of the growth mechanism, especially for the further development of a multi-functional method such (MSE) Used in the production of industrial equipment. NR geometry allows for improved photon extraction efficiency, and the use of cucnrs has been successfully demonstrated in the manufacture of red monochrome and monolithic integrationgreen-blue (RGB)high- Brightness- LEDs (LEDs). From equipment, arranged in an orderly manner, it features a uniform size and shape that is ideal for high Density integration and chip processing technology. Among other things, this can be achieved in replacing traditional flat LEDs in solids National Lighting Market Other applications include nano-electronics, nano-sensing, or photovoltaic. In addition, the semiconductor laser is composed of low The size NRs has high potential for integration with large-scale integrated circuits and can be used in many new applications such as image scanning, optical communication, information processing, optical interconnect, data storage, etc. . Semiconductor- Lasers based on nano devices can provide both a gain medium and a cavity for the laser. The laser mechanism in the laser diode is determined by the geometry of the optical cavity. Single- When the excitation Emission of the coherent light is included in a thin cavity, the mode excitation occurs. If the wave duct is wide compared to the wavelength of the light, then multiple transverse optical modes will help the laser. The most common optical cavity, such as Fabry-p é rot (FP) Whisper cavitygallery modes (WGMs) And nano-photon crystals, which usually require good Faceted NR surfaces and/or periodic NR arrays in the nano-laser system for highQuality Factors (Q). Although there is a large amount of research on the depression of GaN NRs Organic Chemical Vapor Deposition (MOCVD)and molecular-beam epitaxy (MBE) , MSE did not perform any work. The advantage of the MSE is that it is a versatile technology that opens up countless possibilities compared to the other two methods, such: easy integration, repeatability, and less cost on an industrial platform to avoid the use of dangerous pre-quality. On the other hand, from an extension point of view, MSE provides the possibility of high growthquality III- Nitrogen extension film at room temperature due to the low increase in surface diffusionenergy ions. In other cases of MBE and MOCVD processes, in order to obtain high- Since the fluidity of the adatoms is mainly a high-quality film contributed by thermal energy. Potential for high growth with MSE- High quality GaN NRs and films have been introduced in previous studies. Here we show our position. and diameter- Controlled GaN NRs grown on Si (001) Substrate, assisted by a tin mask of NSL patterned, using DC (dc)- Reactive MSE using a liquid Ga target. Our MSE process can promote good growth. faceted - Axis-oriented GaN NRs directly on the natural SiO layer inside the Nano Open field, which has not been reported in the literature. Based on the representation of scanning electron microscopy, we propose a model consisting of 5 growth stages (SEM), x- Ray diffraction (XRD) Transmission electron microscope (TEM), high- Resolution scanning transmission electron microscope (STEM), and energy-dispersive x- Ray spectrum (EDX). This shows the formation of different growth behaviors from the initial morphology to the formation of individual NRs mature inside the Nano Through MBE and MOCVD, the opening is compared to the sunken NRs on the isostructural templates (such as GaN and ain. Also,- The grown GaN NRs are at room temperature and single- Mode shooting through the light pump confirms the high Quality and purity of materials. The MSE depression of our GaN NRs on the Si wafer is involved in integration-circuit (IC) Large industry- Large-scale manufacturing of silicon Based on hybrid GaN optoelectronic.